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MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary NPN type is the MJ3001. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit PNP MJ2501 NPN MJ3001 V CBO Collector-base Voltage (I E = 0) 80 V V CEO Collector-emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 5 V IC Collector Current 10 A IB Base Current 0.2 A P tot Total Dissipation at T c 25 o C 150 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C For PNP types voltage and current values are negative. June 1997 1/4 MJ2501 / MJ3001 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector