LGE mmbt3906 free download

File name mmbt3906.pdf

MMBT3906 SOT-23 Transistor(PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.3 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -10A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, E=0 -0.1 A Collector cut-off current ICEX VCE=-30V,VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-10mA 100 300 DC current gain hFE(2) VCE= -1V, IC=-50mA 60 hFE(3) VCE= -1V, IC=-100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 50mA, IB=- 5mA -0.95 V Transition frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 MHz Delay Time