Philips bf1202 r wr free download

File name bf1202_r_wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2010 Sep 16 Supersedes data of 2000 Mar 29 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION 3 handbook, 2 columns 4 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier 3 gate 2 Partly internal self-biasing circuit to 2 1 ensure good cross-modulation 4 gate 1 performance during AGC and good Top view MSB035 DC stabilization. Marking code legend: BF1202R marking code: LE* * = - : made in Hong Kong APPLICATIONS * = p : made in Hong Kong Fig.2 Simplified outline VHF and UHF applications with * = t : made in Malaysia (SOT143R). 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. 4 handbook, 2 columns 3 lfpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and 1 2 2 1 substrate interconnected. Integrated diodes between gates and source Top view MSB014 Top view MSB842 protect against excessive input voltage surges. The BF1202, BF1202 marking code: LD* BF1202WR marking code: LE* BF1202R and BF1202WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B).