HT Semiconductor ktc4376 free download

File name ktc4376.pdf

KTC4376 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Current Application 2. COLLECTOR Complementary to KTA1664 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 800 mA PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA hFE(1) VCE=1V, IC=100mA 100 320 DC current gain hFE(2) VCE=1V, IC=700mA 35 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=20mA 0.5 V Base-emitter voltage VBE VCE=1V, IC=10mA 0.5 0.8 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 13 pF Transition frequency fT VCE=5V,IC=10mA 120 MHz CLASSIFICATION OF hFE(1) RANK