Samsung but11 free download

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BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCES 850 V : BUT11 1000 V Collector Emitter Voltage : BUT11A VCEO 400 V : BUT11 450 V Emitter Base Voltage : BUT11A VEBO 9 V 1.Base 2.Collector 3.Emitter Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A Base Current (Pulse) IB 4 A Collector Dissipation ( T C=25) PC 100 W Junction Temperature TJ 150 Storage Temperature T STG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic Symbol Test Conditions Min Typ Max Unit *Collector-Emitter Sustaining Voltage : BUT11 VCEO (sus) IC = 100mA, IB = 0 400 V : BUT11A 450 V Collector Cutoff Current : BUT11 ICES VCE = 850V, VBE = 0 1 mA : BUT11A VCE = 1000V, VBE = 0 1 mA Emitter Cutoff Current IEBO VBE = 9V, IC = 0 10 mA Collector Emitter Saturation Voltage : BUT11 VCE(sat) IC = 3A, IB = 0.6A 1.5 V : BUT11A IC = 2.5A, IB = 0.5A 1.5 V Base Emitter Saturation Voltage : BUT11 VBE(sat) IC = 3A, IB = 0.6A 1.3 V : BUT11A IC = 2.5A, IB = 0.5A 1.3 V Turn On Time tON VCC = 250V, IC = 2.5A 1 uS Storage Time tSTG IB1 = IB2 = 0.5A 4 uS Fall Time tF 0.8 uS * Pulsed Test: PW = 300uS, duty cycle = 1.5% BUT11/11A NPN SILICON TRANSISTOR