LGE mpsa06 free download

File name mpsa06.pdf

MPSA06 TO-92 Transistor (NPN) 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features Power amplifier MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance,Junction to Ambient 417 /W ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 A Collector cut-off current ICEO VCE=60V, IB=0 0.1 A Emitter cut-off current IEBO VEB=3V, IC=0 0.1 A hFE1 VCE=1V, IC= 100mA 100 400 DC current gain hFE2 VCE=1V, IC= 10mA 100 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=10mA 1.2 V VCE=2V, IC= 10mA Transiti