KEC ktd1624 free download

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SEMICONDUCTOR KTD1624 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Vollector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current(Pulse) ICP 6 A Base Current IB 600 mA PC 500 mW Collector Power Dissipation PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 2 * : Package mounted on ceramic substrate(250mm 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1 Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 hFE(1) (Note) VCE=2V, IC=100 100 - 400 DC Current Gain hFE (2) VCE=2V, IC=3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=100 - 0.19 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100 - 0.94 1.2 V Transition Frequency fT VCE=10V, IC=50 - 150 - Collector Output Capacitance Cob VCB=10V, f=1 , IE=0 - 25 - Turn-on Time ton - 70 - Switching Storage Time tstg