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Descr: . Electronic Components Datasheets Active components Transistors CET cek01n6g.pdf
Group:Electronics > Components > Transistors
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CEK01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G D G S D S TO-92(Ammopack) TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS

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