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GSME bc817 free download

Electronic components, integrated circuits, semiconductor - datasheets and schematics

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File name:bc817.pdf
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Descr: . Electronic Components Datasheets Active components Transistors GSME bc817.pdf
Group:Electronics > Components > Transistors
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Guilin Strong Micro-Electronics Co.,Ltd. GM817-16 GM817-25 GM817-40 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc - Emitter-Base Voltage VEBO 5.0 Vdc - Collector Current--Continuous Ic 500 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board(1) PD 225 mW TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation Alumina Substrate ,(2)TA=25 PD 300 mW Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature] TJ,Tstg -55to+150 DEVICE MARKING GM817-16=6A;GM817-25=6B; GM817-40=6C Guilin Strong Micro-Electronics Co.,Ltd. GM817-16 GM817-25 GM817-40 ELECTRICAL CHARACTERISTICS (TA=25 25 unless otherwise noted 25 ) 25 Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 45 -- Vdc (Ic=10mAdc,IB=0) Collector-Base Breakdown Voltage V(BR)CBS 50 -- Vdc (Ic=10Adc,VEB=0) Emitter-Base Breakdown Voltage V(BR)EBO 5.0 -- Vdc (IE=1.0Adc,Ic=0) Collector Cutoff Current (VCB=20v) ICBO -- 100 nA (VCB=20Vdc,TA=150) -- 5.0 uA ON CHARCTERISTICS Characteristic Symbol Min Typ Max Unit DC Current Gain HFE -- (Ic=100mAdc,VCE=1.0Vdc)

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