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PZTA42 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features High breakdown voltage Low collector-emitter saturation voltage Complementary type: PZTA92(PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V Collector cut-off current ICBO VCB=200V,IE=0 0.1 A Emitter cut-off current IEBO VEB=6V,IC=0 0.1 A hFE(1) VCE=10V,IC=1mA 25 DC current gain hFE(2) VCE=10V,IC=10mA 40 hFE(3) VCE=10V,IC=30mA 40 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA,f=100MHz 50 MHz Collector output capacitance Cob VCB=20V,IE=0,f=1MHz 3 pF PZTA42 SOT-223 Transistor(NPN) Typical Characteristics