LGE mmdt5551 free download

File name mmdt5551.pdf

MMDT5551 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching MRKING:K4N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=120V, IE=0 0.05 A Emitter cut-off current IEBO VEB=4V, IC=0 0.05 A hFE(1) VCE=5 V, IC=1mA 80 DC current gain hFE(2) VCE=5 V, IC=10mA 80 250 hFE(3) VCE=5 V, IC=50mA 30 VCE(sat)1 IC=10mA, IB=1mA 0.15 V Collector-emitter saturation voltage VCE(sat)2 IC=50mA, IB=5mA 0.2 V VBE(sat)1 IC=10mA, IB=1mA 1 V Base-emitter saturation voltage VBE(sat)2 IC=50mA, IB=5mA 1 V Transition frequency fT VCE=10V, IC=10mA,f=100MHz 100 300 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz