KEC khb7d5n60p1 f1 f2 free download

File name khb7d5n60p1_f1_f2.pdf

SEMICONDUCTOR KHB7D5N60P1/F1/F2 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB7D0N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V Qg(typ.)= 32.5nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL KHB7D5N60F1 UNIT KHB7D5N60P1 KHB7D5N60F2 KHB7D0N60F1 Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V @TC=25 7.5 7.5* ID Drain Current @TC=100 4.6 4.6* A Pulsed (Note1) IDP 30 30* Single Pulsed Avalanche Energy EAS 230 mJ (Note 2) Repetitive Avalanche Energy EAR 14.7 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 147 48 W PD Dissipation Derate above 25 1.18 0.38 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics KHB7D0N60F2 Thermal Resistance, Junction-to-Case RthJC 0.85 2.6 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W Thermal Resistance, RthJA 62.5 62.5 /W Junction-to-Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2007. 5. 10 Revision No : 0 1/7