Samsung ksc5030pwd free download

File name ksc5030pwd.pdf

KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SWITCHING TO-3P WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (T C=25 ) PC 100 W 1.Base 2.Collector 3.Emitter Junction Temperature TJ 150 Storage Temperature T STG -55 ~ 150 ELECTRICAL CHARACTERISTICS ) (T C=25 Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1100 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 800 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB2 = 0.6A 800 V L = 2mH, Clamped Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 10 uA DC Current Gain hFE1 VCE = 5V, IC = 0.4A 10 40 hFE2 VCE = 5V, IC = 2A 8 Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.6A 2 V Base Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Output Capacitance COB VCB = 10V, IE = 0, f = 1MHz 120 pF Current Gain Bandwidth Product fT VCE = 10V, IC = 0.4A 15 MHz Turn On Time tON VCC = 400V 0.5 uS Storag