HT Semiconductor emf24 free download

File name emf24.pdf

EMF24 Power management (dual transistors) FEATURES SOT-563 2SC4617 and DTC114E are housed independently in a package. Power management circuit Power switching circuit in a single package Mounting cost and area can be cut in half 1 MARKING: F24 TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 A Emitter cut-off current IEBO VEB=7V,IC=0 0.1 A DC current gain hFE VCE=6V,IC=1mA 180 390 Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.4 V Transition frequency fT VCE=12V,IC=2mA,f=100MHz 180 MHz Collector output capacitance Cob VCB=12V,IE=0,f=1MHz 3.5 pF 1 JinYu www.htsemi.com semiconductor Date:2011/ 05 EMF24 DTr2 Maximum ratings (Ta=25 ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 Output current