KEC kmb7d1dp30qa free download

File name kmb7d1dp30qa.pdf

SEMICONDUCTOR KMB7D1DP30QA TECHNICAL DATA Dual P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and Load H Switch. T D P G L FEATURES A DIM MILLIMETERS VDSS=-30V, ID=-7.1A A _ 4.85 + 0.2 Drain-Source ON Resistance B1 _ 3.94 + 0.2 8 5 B2 _ 6.02 + 0.3 RDS(ON)=25m (Max.) @ VGS=-10V D _ 0.4 + 0.1 RDS(ON)=41m (Max.) @ VGS=-4.5V B1 B2 G 0.15+0.1/-0.05 H _ 1.63 + 0.2 Super Hige Dense Cell Design 1 4 _ L 0.65 + 0.2 P 1.27 T 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 )