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Descr: . Electronic Components Datasheets Active components Transistors HT Semiconductor a733.pdf
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A733 TRANSISTOR (PNP) SOT-23 FEATURE Collector-Base Voltage 1. BASE Complement to C945 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -5uA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 uA DC current gain hFE VCE= -6 V, IC= -1mA 120 475 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V Base-emitter voltage VBE(on) VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V Transition frequency fT VCE=-6V,IC=-10mA 50 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 4.5 7 pF VCE=-6V,IC=-0.3mA, Noise figure NF 6 20 d

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