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STL21N65M5 N-channel 650 V, 0.175 , 17 A PowerFLATTM (8x8) HV ultra low gate charge MDmeshTM V power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STL21N65M5 710 V < 0.190 17 A (1) 1. The value is rated according to Rthj-case 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application Switching applications Description Figure 1. Internal schematic diagram The devices are N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STL21N65M5 21N65M5 PowerFLATTM (8x8) HV Tape and reel June 2010 Doc ID 17438 Rev 2 1/14 www.st.com 14 Contents STL21N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Doc ID 17438 Rev 2 STL21N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 650 V VGS Gate-source voltage