HT Semiconductor 2sd1766 free download

File name 2sd1766.pdf

2SD1766 TRANSISTOR (NPN) FEATURES SOT-89 Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 40 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector dissipation 500 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 A Emitter cut-off current IEBO VEB=4V, IC=0 1 A DC current gain hFE(1) VCE=3V, IC=500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF CLASSIFICATION OF hFE(1) Rank P Q R Range 82-180 120-270 180-390 Marking DBP DBQ DBR 1 JinYu