WingShing 2sd1650 free download

File name 2sd1650.pdf

2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PML SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 3.5 A ICM Collector current peak value - 7.0 A Ptot Total power dissipation Tmb 25 - 50 W VCEsat Collector-emitter saturation voltage IC = 2.0A; IB = 0.4A - 1.5 V Icsat Collector saturation current f = 16KHz - A VF Diode forward voltage IF = 2.0A 2.0 V tf Fall time IC=2A,IB1=-IB2=0.4A,VCC=140V 1.0 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 3.5 A ICM Collector current peak value - 7.0 A IB Base current (DC) - 1.5 A IBM Base current peak value - 3 A Ptot Total power dissipation Tmb 25 - 50 W Tstg Storage temperature -55 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICE Collector cut-off current