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2SC5585 SOT-523 Transistor(NPN) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat)250mV at IC = 200mA / IB = 10mA MARKING: BX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 15 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB= 15 V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 A DC current gain hFE VCE=2V, IC=10mA 270 680 Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=10mA 0.25 V Transition frequency fT VCE=2V,IC=10mA, f=100MHz 320 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 7.5 pF 2SC5585 SOT-523 Transistor(NPN) Typical Characteristics