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STL23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmeshTM II Power MOSFET (with fast diode) PowerFLATTM (8x8) HV Preliminary data Features VDSS Type RDS(on) max ID (@Tjmax) STL23NM60ND 650 V < 0.180 19.5 A(1) 1. This value is rated according to Rthj-case. The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities Application Figure 1. Internal schematic diagram Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order code Marking Package Packaging STL23NM60ND 23NM60ND PowerFLATTM 8x8 HV Tape and reel April 2010 Doc ID 17439 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice. Contents STL23NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 17439 Rev 1 STL23NM60ND Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS