ST std3nb50-1 free download

File name std3nb50-1.pdf

STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5 - 3A - IPAK/DPAK PowerMESHTM MOSFET PRELIMINARY DATA Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STD3NB50 500 V < 2.8 3A STD3NB50-1 500 V < 2.8 3A FEATURES SUMMARY TYPICAL RDS(on) = 2.5 s) 3 3 EXTREMELY HIGH dv/dt CAPABILITY t( 2 100% AVALANCHE TESTED 1 1 VERY LOW INTRINSIC CAPACITANCES d uc ro GATE CHARGE MINIMIZED IPAK DPAK TO-251 TO-252 eP DESCRIPTION let Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- so vanced family of power MOSFETs with outstand- ing performances. The new patent pending strip Figure 2. Internal Schematic Diagram Ob layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ - (s) dt capabilities and unrivalled gate charge and switching characteristics. ct du APPLICATIONS SWITCH MODE POWER SU