HT Semiconductor 2sd2114 free download

File name 2sd2114.pdf

2SD2114 TRANSISTOR (NPN) FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.25 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 12 V Collector cut-off current ICBO VCB=20 V, IE=0 0.5 A Emitter cut-off current IEBO VEB=10V,IC=0 0.5 A DC current gain hFE VCE=3V, IC=10mA 820 2700 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=20 mA 0.4 V VCE=10V, IC=50mA Transition frequency fT 350 MHz f=100MHz output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF Vin=0.1V(rms),IB=1mA, On resistance R(on) 0.8