KEC ktc3209 free download

File name ktc3209.pdf

SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Emitter Current IE -2 A Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100mA, IB=0 5 - - V hFE (1) (Note) VCE=2V, IC=0.5A (Note) 70 - 240 DC Current Gain hFE (2) (Note) VCE=2V, IC=1.5A 40 - - Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A - - 1.2 V Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF Turn-on Time ton - 0.1 - Switching Storage Time tstg - 1.0 - S Time Fall Time tf - 0.1 - Note : hFE Classification 0:70 140, Y:120 240 2005. 12. 2