WingShing 2sd1911 free download

File name 2sd1911.pdf

2SD1911 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb 25 - 50 W VCEsat Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A - 5 V Icsat Collector saturation current f = 16KHz 4.5 - A VF Diode forward voltage IF = 4.5A 1.6 2.0 V tf Fall time ICsat = 4.0A; f = 16KHz 1.0 s LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 1500 V VCEO Collector-emitter voltage (open base) - 600 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A IB Base current (DC) - A IBM Base current peak value - A Ptot Total power dissipation Tmb 25 - 50 W Tstg Storage temperature -65 150 Tj Junction temperature - 150 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP MAX UNIT ICE Collector cut-off current