LGE 3dd13003 to-220-3l free download

File name 3dd13003_to-220-3l.pdf

3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Test conditions MIN TYP MAX UNIT Symbol Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V Collector cut-off current ICBO VCB=700V,IE=0 1 mA Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA Emitter cut-off current IEBO VEB=9V, IC=0 1 mA hFE1 VCE=5V, IC= 0.5 A 8 40 DC current gain hFE2 VCE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A