ST 2stc5200 free download

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2STC5200 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2STC5200 2STC5200 TO-264 Tube December 2007 Rev 2 1/9 www.st.com 9 Electrical ratings 2STC5200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A ICM Collector peak current 30 A Ptot Total dissipation at TC = 25