HT Semiconductor umg3n free download

File name umg3n.pdf

UMG3N General purpose transistors (dual transistors) SOT-353 FEATURES Two DTC143T chips in a package Mounting possible with SOT-353 automatic mounting machines. 1 Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: G3 (3) (2) (1) R1 R1 Equivalent circuit DTr2 DTr1 (4) (5)/(6) Absolute maximum ratings (Ta=25) Symbol Parameter LIMITS Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 mW Tj Junction temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA DC current gain hFE VCE=5V,IC=1mA 100 600 Collector-emitter saturation voltage VCE(sat) IC=5mA,IB=0.25mA 0.3 V Transition frequency fT VCE=10V,IE=-5mA, f=100MHz 250 MHz Input resistor R1 3.29 4.7 6.11 k 1 JinYu www.htsemi.com semiconductor Date:2011/ 05