HT Semiconductor fmmt591 free download

File name fmmt591.pdf

FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -80 V 1 Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A hFE(1) VCE=-5V, IC=-1mA 100 hFE(2) 1 VCE=-5V, IC=-500mA 100 300 DC current gain hFE(3) 1 VCE=-5V, IC=-1A 80 hFE(4) 1 VCE=-5V, IC=-2A 15 1 VCE(sat)1 IC=-500mA, IB=-50mA -0.3 V Collector-emitter saturation voltage 1