LGE 2sd1760 free download

File name 2sd1760.pdf

2SD1760(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 1 A Emitter cut-off current IEBO VEB=4V, IC=0 1 A DC current gain hFE(1) VCE=3V, IC=500mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V Transition frequency fT VCE=5V, IC=500mA,f=30MHz 90 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 40