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STB40NS15 N-channel 150V - 0.045 - 40A - D2PAK MESH OVERLAYTM Power MOSFET Features RDS(on) Type VDSS ID (max) STB40NS15 150V <0.052 40A Exceptional dv/dt capability Gate charge minimized 3 1 Very low intrinsic capacitances D2PAK Applications Switching application Description Figure 1. Internal schematic diagram This Power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. Table 1. Device summary Part number Marking Package Packaging STB40NS15T4 B40NF15 D2PAK Tape & reel October 2007 Rev 4 1/13 www.st.com 13 Contents STB40NS15 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB40NS15 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 150 V VDGR Drain-gate voltage (RGS = 20 k) 150 V VGS Gate- source voltage