HT Semiconductor c1815 free download

File name c1815.pdf

C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V