HT Semiconductor emf23 free download

File name emf23.pdf

EMF23 Power management (dual transistors) FEATURES SOT-563 2SA1774 and DTC114E are housed independently in a package Power management circuit Power switching circuit in a single package Mounting cost and area can be cut in half 1 MARKING: F23 TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 A DC current gain hFE VCE=-6V,IC=-1mA 180 390 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Transition frequency fT VCE=-12V,IC=-2mA,f=100MHz 140 MHz Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 5 pF 1 JinYu www.htsemi.com semiconductor Date:2011/ 05 EMF23 DTr2 Maximum ratings (Ta=25 ) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50