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STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLATTM (6x5) STripFETTM VI DeepGATETM Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLATTM ( 6x5 ) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STL150N3LLH6 150N3LLH6 PowerFLATTM (6x5) Tape and reel September 2009 Doc ID 15345 Rev 2 1/12 www.st.com 12 Contents STL150N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 15345 Rev 2 STL150N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage