HT Semiconductor umf5 free download

File name umf5.pdf

UMF5N General purpose transistors (dual transistors) FEATURES SOT-363 2SA2018 and DTC144E are housed independently in a package. Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 (3) (2) (1) Marking: F5 DTr2 Tr1 Equivalent circuit R1 R2 (4) (5) (6) Tr1 Absolute maximum ratings (Ta=25) Symbol Parameter Value Units VCBO Collector-Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V Collector cut-off current ICBO VCB=-15V, IE=0 -0.1 A Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 A DC current gain hFE VCE=-2V, IC=-10mA 270 680 Collector-emitter saturation voltage VCE(sat) IC=-200mA, IB=-10mA -0.25 V Transition frequency fT VCE=-2V, IE=-10mA, f=100MHz 260 MHz Collector output capacitance