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Now downloading free:CET ceu16n10l ced16n10l

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Descr: . Electronic Components Datasheets Active components Transistors CET ceu16n10l_ced16n10l.pdf
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CED16N10L/CEU16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 13.3A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS

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