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File name:ceg8208.pdf
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Descr: . Electronic Components Datasheets Active components Transistors CET ceg8208.pdf
Group:Electronics > Components > Transistors
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CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D D 20V, 6.5A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K *1K G1 G2 High power and current handing capability. Lead free product is acquired. S1 S2 TSSOP-8 for Surface Mount Package. *Typical value by design ESD Protected: HBM 2000 V G2 S2 S2 D G1 D 1 8 D S1 S1 S1 2 7 S2 D TSSOP-8 S1 3 6 S2 G1 4 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS

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