ON Semiconductor njt4030p-d free download

File name njt4030p-d.pdf

NJT4030P Bipolar Power Transistors PNP Silicon Features Collector --Emitter Sustaining Voltage -- http://onsemi.com VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - - hFE = 200 (Min) @ IC = 1.0 Adc PNP TRANSISTOR = 100 (Min) @ IC = 3.0 Adc 3.0 AMPERES Low Collector - -Emitter Saturation Voltage - - 40 VOLTS, 2.0 WATTS VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc = 0.500 Vdc (Max) @ IC = 3.0 Adc SOT--223 Surface Mount Packaging C 2,4 Epoxy Meets UL 94, V- @ 0.125 in -0 ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant B1 E3 Schematic MARKING DIAGRAM SOT- -223 AYW CASE 318E 4030PG STYLE 1 1 A = Assembly Location Y Year W = Work Week 4030P = Specific Device Code G = Pb--Free Package PIN ASSIGNMENT 4