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SEMICONDUCTOR KHB1D0N60D/I N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 (Max), @VGS = 10V Qg(typ.) = 4.5nC MAXIMUM RATING (Ta=25 ) RATING CHARACTERISTIC SYMBOL UNIT KHB1D0N60D KHB1D0N60I KHB1D0N60I Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V @TC=25 1.0 1.0* ID Drain Current @TC=100 0.60 0.60* A Pulsed (Note1) IDP 3.0 3.0* Single Pulsed Avalanche Energy EAS 63 mJ (Note 2) Repetitive Avalanche Energy EAR 2.8 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 5.5 V/ns (Note 3) Drain Power Ta=25 28 28 W PD Dissipation Derate above 25 0.22 0.22 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 4.53 4.53 /W Thermal Resistance, Case-to-Sink RthCS 50 50 /W Thermal Resistance, Junction-to- RthJA 110 110 /W Ambient * : Drain current limited by maximum junction temperature. 2007. 3. 26 Revision No : 3 1/6 KHB1D0N60D/I ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static