HT Semiconductor m8050 free download

File name m8050.pdf

M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 300 hFE3 VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA