Samsung ksc5021p free download

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KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING : tf = 0.1 I (Typ) TO-220 WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A ) Collector Dissipation ( T C=25 PC 50 W 1.Base 2.Collector 3.Emitter Junction Temperature TJ 150 Storage Temperature T STG -55 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 500 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX(sus) IC = 2.5A, IB1 = -IB2 = 1A 500 V L = 1mH, Clamped Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 10 uA DC Current Gain hFE1 VCE = 5V, IC = 0.6A 15 50 hFE2 VCE = 5V, IC = 3A 8 Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.6A 1 V Base Emitter Saturation Voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Output Capacitance COB VCB = 10V, IE = 0, f = 1MHz 80 pF Current Gain Bandwidth Product fT VCE = 10V, IC = 0.6A 18 MHz Turn On Time tON VCC = 200V 0.5 uS Storage Time tS 5IB1 = -2.5IB2 = IC = 4A