ST st13003dn free download

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ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 1 2 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003DN 13003DN SOT-32 BAG February 2010 Doc ID 17186 Rev 1 1/8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8 change without notice. Electrical ratings ST13003DN 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Collector-base voltage (IC = 0) 9 V IC Collector current 1 A ICM Collector peak current (tP < 5 ms) 2 A IB Base current 0.5 A IBM Base peak current (tP < 5 ms) 1 A PTOT Total dissipation at Tc = 25