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TIP111 TO-220 Darlington Transistor (NPN) 1. BASE TO-220 2. COLLECTOR 3. EMITTER 3 2 Features 1 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10mA,IE=0 80 V (sus) Collector-emitter sustaining voltage VCEO IC=30mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=10mA,IC=0 5 V Collector cut-off current ICEO VCE=40V,IB=0 2 mA Collector cut-off current ICBO VCB=80V,IE=0 1 mA Emitter cut-off current IEBO VEB=5V,IC=0 2 mA hFE(1) VCE=4V,IC=1A 1000 DC current gain hFE(2) VCE=4V,IC=2A 500 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=8mA 2.5 V Base-emitter voltage VBE VCE=4V,IC=2A 2.8 V Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz