HT Semiconductor 2sb1197 free download

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2SB1 1 97 TRANSISTOR(PNP) SOT-23 1. BASE Unit : mm FEATURES 2. EMITTER Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) 3. COLLECTOR IC =-0.8A. Complements the 2SD1781. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.8 A PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-50A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE= -50A, IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A Emitter cut-off current IEBO VEB= -4V,IC=0 -0.5 A DC current gain hFE VCE=-3V,IC= -100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.5 V VCE=-5V, IC= -50mA, Transition frequency fT 50 200 MHz f=100MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 12 30 pF CLASSIFICATION OF hFE Rank P Q R Ra