ST sts10n3lh5 free download

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STS10N3LH5 N-channel 30 V, 0.019 , 10 A, SO-8 STripFETTM V Power MOSFET Features Type VDSS RDS(on) max ID STS10N3LH5 30 V 0.021 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness SO-8 Low gate drive power losses Application Switching applications Description Figure 1. Internal schematic diagram This STripFETTMV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Order codes Marking Package Packaging STS10N3LH5 10D3L SO-8 Tape and reel May 2009 Doc ID 15618 Rev 1 1/13 www.st.com 13 Contents STS10N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 15618 Rev 1 STS10N3LH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-Source voltage