HT Semiconductor std123s free download

File name std123s.pdf

STD1 23S TRANSISTOR(NPN) SOT-23 FEATURES Low saturation medium current application 1. BASE Extremely low collector saturation voltage 2. EMITTER Suitable for low voltage large current drivers 3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR) CBO IC=50A, IE=0 20 V Collector-emitter breakdown voltage V (BR) CEO IC =1mA, IB=0 15 V Emitter-base breakdown voltage V (BR) EBO IE= 50A, IC=0 6.5 V Collector cut-off current ICBO VCB= 20 V, IE=0 0.1 A Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 A DC current gain hFE VCE=1V, IC= 100mA 150 Collector-emitter saturation voltage VCE (sat) IC=500mA, IB= 50mA 0.3 V Transition frequency