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Descr: . Electronic Components Datasheets Active components Transistors Philips pbhv9040z.pdf
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PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 -- 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540Z. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified 1.3 Applications I Electronic ballast for fluorescent lighting I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch mode power supply 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 V - - -500 V voltage VCEO collector-emitter voltage open base - - -400 V IC collector current - - -0.25 A hFE DC current gain VCE = -10 V; 100 200 - IC = -50 mA NXP Semiconductors PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number Package

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