KEC kgt15n120ndh free download

File name kgt15n120ndh.pdf

SEMICONDUCTOR TECHNICAL DATA KGT15N120NDH General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V @TC=25 30 A Collector Current IC @TC=100 15 A Pulsed Collector Current ICM* 45 A Diode Continuous Forward Current @TC=100 IF 15 A Diode Maximum Forward Current IFM 45 A @TC=25 190 W Maximum Power Dissipation PD @TC=100 75 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature E C THERMAL CHARACTERISTIC G CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.82 /W Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.3 /W Thermal Resistance, Junction to Ambient Rt h JA 40 /W 2011. 8. 11 Revision No : 0 1/7 KGT15N120NDH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1.0mA 1200 - - V Collector Cut-off Current