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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ) FEATURES · 4.5 V drive available · Low on-state resistance RDS(on)1 = 12 m MAX. (VGS = 10 V, ID = 18 A) · Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) · Built-in gate protection diode · Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±35 ±140 1.5 40 150 -55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW 10 µs, Duty Cycle 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14063EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark shows major revised points. © 1999, 2000 2SK3296 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 35 A IF = 35 A, VGS = 0 V IF = 35 A, VGS = 0 V di/dt = 100 A/µs TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 18 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V , ID = 18 A VGS(on) = 10 V RG = 10 1.0 9.0 8.5 12 1300 570 300 70 1220 100 180 30 4.5 8.0 1.0 35 23 12 19 MIN. TYP. MAX. 10 ±10 2.5 UNIT µA µA V S m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID VGS 0 = 1 µs Duty Cycle 1% ID Wave Form VGS VGS Wave Form IG = 2 mA VGS(on) 90% RL VDD 0 10% PG. 90% 90% 50 ID 0 10% 10% td(on) ton tr td(off) toff tf 2 Data Sheet D14063EJ2V0DS 2SK3296 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 160 140 ID - Drain Current - A 1000 10