GSME 2sa1162 free download

File name 2sa1162.pdf

Guilin Strong Micro-Electronics Co.,Ltd. GM1162 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -50 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Collector Current-Continuous Ic -150 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation PD 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 Total Device Dissipation 300 mW PD Alumina Substrate ,(2)TA=25 Derate above25 25 2.4 mW/ Thermal Resistance Junction to Ambient RJA 417 /W Junction and Storage Temperature TJ,Tstg -55to+150 DEVICE MARKING GM1162 HFE:70-140=SO; 120-240=SY; 200-400=SG Guilin Strong Micro-Electronics Co.,Ltd. GM1162 ELECTRICAL CHARACTERISTICS =25 unless otherwise noted 25) (TA=25 ) Characteristic Symbol Min Type Max Unit OFF CHARACTERISTICS Emitter Cutoff Current IEBO -- -- -0.1 A (VEB=-5.0v,IC=0) Collector Cutoff Current ICBO -- -- -0.1 A (VCB=-50v,IE=0) Collector Saturation Voltage VCE(sat) -- -0.1 -0.3 Vdc (Ic=-100mAdc,IB=-10mA) DC Current Gain HFE 70 -- 400 (VCE=-6.0v,IC=-2.0mA) Gain Bandwidth Product fT 80 -- -- MHz (VCE=-10v,IC=-1.0mA) Noise Figure NF -- 1.0 10 dB (V CE=-6V,Ic=-0.1mA,f=1kHz,Rg=10k) Output Capacitance Cob -- 4.0 7.0 pF (VCB=-10v,IE=0,f=1.0MHz) 1. FR-5=1.0